Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

K. Kuwano; S. Ashok

doi:10.1016/S0169-4332(97)80155-9

Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

K. Kuwano, S. Ashok

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13 Scopus citations

Abstract

Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 ¹² cm ^-3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.

Original language	English (US)
Pages (from-to)	629-633
Number of pages	5
Journal	Applied Surface Science
Volume	117-118
DOIs	https://doi.org/10.1016/S0169-4332(97)80155-9
State	Published - Jun 2 1997

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(97)80155-9

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title = "Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal",

abstract = " Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes. ",

author = "K. Kuwano and S. Ashok",

note = "Funding Information: One of the authors (K.K.) would like to acknowledge the graduates tudy fellowship support received from Japan Energy Corporation, Ibaraki.",

year = "1997",

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doi = "10.1016/S0169-4332(97)80155-9",

language = "English (US)",

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pages = "629--633",

journal = "Applied Surface Science",

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T1 - Investigation of sputtered indium-tin oxide/silicon interfaces

T2 - Ion damage, hydrogen passivation and low-temperature anneal

AU - Kuwano, K.

AU - Ashok, S.

N1 - Funding Information: One of the authors (K.K.) would like to acknowledge the graduates tudy fellowship support received from Japan Energy Corporation, Ibaraki.

PY - 1997/6/2

Y1 - 1997/6/2

N2 - Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.

AB - Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfacial barrier on n-Si and an increase on p-Si as expected from ion damage. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations ≈ 2-5 × 10 12 cm -3 . Pre-hydrogenation of wafers in a plasma greatly reduces the DLTS signal, offering first evidence of in-situ passivation of sputter damage by atomic hydrogen. Low-temperature anneal (180°C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.

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SN - 0169-4332

VL - 117-118

SP - 629

EP - 633

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal

Abstract

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