TY - GEN
T1 - Investigation of surface roughness effects for D-band SIW transmission lines on LCP substrate
AU - Li, Sensen
AU - Yi, Ming
AU - Pavlidis, Spyridon
AU - Yu, Huan
AU - Swaminathan, Madhavan
AU - Papapolymerou, John
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/3/23
Y1 - 2017/3/23
N2 - This paper studies the influence of surface roughness on the performance of substrate integrated waveguide (SIW) structures in D-band (110-170 GHz). SIW structures are fabricated in a flexible low-cost/loss organic substrate, liquid crystal polymer (LCP), after polishing the material surface. The fabrication realizes a minimum feature size of 20 μm. The average insertion loss of the polished SIWs in D-band is measured to be 0.33dB/mm, showing an average 0.35 dB/mm improvement compared with SIWs in the raw substrate, without affecting the quality of the impedance match. Based on the modeling result, simulation is able to predict the loss under different surface roughness conditions, which is verified with measurements. Therefore, both fabrication and modeling solutions are provided to facilitate future high-frequency designs of SIW-based devices. This is the first paper that demonstrates the loss of SIW to be comparable to that of microstrip in the D-Band.
AB - This paper studies the influence of surface roughness on the performance of substrate integrated waveguide (SIW) structures in D-band (110-170 GHz). SIW structures are fabricated in a flexible low-cost/loss organic substrate, liquid crystal polymer (LCP), after polishing the material surface. The fabrication realizes a minimum feature size of 20 μm. The average insertion loss of the polished SIWs in D-band is measured to be 0.33dB/mm, showing an average 0.35 dB/mm improvement compared with SIWs in the raw substrate, without affecting the quality of the impedance match. Based on the modeling result, simulation is able to predict the loss under different surface roughness conditions, which is verified with measurements. Therefore, both fabrication and modeling solutions are provided to facilitate future high-frequency designs of SIW-based devices. This is the first paper that demonstrates the loss of SIW to be comparable to that of microstrip in the D-Band.
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U2 - 10.1109/RWS.2017.7885963
DO - 10.1109/RWS.2017.7885963
M3 - Conference contribution
AN - SCOPUS:85018169987
T3 - IEEE Radio and Wireless Symposium, RWS
SP - 121
EP - 124
BT - 2017 IEEE Radio and Wireless Symposium, RWS 2017
PB - IEEE Computer Society
T2 - 2017 IEEE Radio and Wireless Symposium, RWS 2017
Y2 - 15 January 2017 through 18 January 2017
ER -