Investigation of the abrupt phase transition in 1T-TaS2/MoS2 heterostructures

Benjamin Grisafe; Rui Zhao; Matthew Jerry; Joshua A. Robinson; Suman Datta

doi:10.1109/VLSI-TSA.2018.8403844

Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures

Benjamin Grisafe, Rui Zhao, Matthew Jerry, Joshua A. Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Electrically induced phase transitions are being investigated for applications in steep-slope transistors, neuromorphic computing, and coupled oscillator networks. Here, we present an avenue to integrate a layered 2D phase transition material 1T-TaS₂ with monolayer MoS₂ via direct synthesis. We experimentally demonstrate that the charge density wave (CDW) based phase transition is preserved when grown directly on MoS₂, however a 42% reduction in the ON/OFF ratio compared to exfoliated devices is observed. First principles calculations of the 1T-TaS₂/MoS₂ heterostructure reveal a 39% reduction in the bandgap of 1T-TaS₂ compared to the free-standing 1T-TaS₂ case.

Original language	English (US)
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403844
State	Published - Jul 3 2018
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China Duration: Apr 16 2018 → Apr 19 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Other

Other	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/16/18 → 4/19/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Instrumentation
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/VLSI-TSA.2018.8403844

Cite this

Grisafe, B., Zhao, R., Jerry, M., Robinson, J. A., & Datta, S. (2018). Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403844

Grisafe, Benjamin ; Zhao, Rui ; Jerry, Matthew et al. / Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

@inproceedings{04267336ac6b480e9d66963e4cf249a9,

title = "Investigation of the abrupt phase transition in 1T-TaS2/MoS2 heterostructures",

abstract = "Electrically induced phase transitions are being investigated for applications in steep-slope transistors, neuromorphic computing, and coupled oscillator networks. Here, we present an avenue to integrate a layered 2D phase transition material 1T-TaS2 with monolayer MoS2 via direct synthesis. We experimentally demonstrate that the charge density wave (CDW) based phase transition is preserved when grown directly on MoS2, however a 42% reduction in the ON/OFF ratio compared to exfoliated devices is observed. First principles calculations of the 1T-TaS2/MoS2 heterostructure reveal a 39% reduction in the bandgap of 1T-TaS2 compared to the free-standing 1T-TaS2 case.",

author = "Benjamin Grisafe and Rui Zhao and Matthew Jerry and Robinson, {Joshua A.} and Suman Datta",

note = "Funding Information: This work was supported by the National Science Foundation Emerging Frontiers in Research and Innovation program under award number 1433307. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

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Grisafe, B, Zhao, R, Jerry, M, Robinson, JA & Datta, S 2018, Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, Province of China, 4/16/18. https://doi.org/10.1109/VLSI-TSA.2018.8403844

Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures. / Grisafe, Benjamin; Zhao, Rui; Jerry, Matthew et al.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Electrically induced phase transitions are being investigated for applications in steep-slope transistors, neuromorphic computing, and coupled oscillator networks. Here, we present an avenue to integrate a layered 2D phase transition material 1T-TaS2 with monolayer MoS2 via direct synthesis. We experimentally demonstrate that the charge density wave (CDW) based phase transition is preserved when grown directly on MoS2, however a 42% reduction in the ON/OFF ratio compared to exfoliated devices is observed. First principles calculations of the 1T-TaS2/MoS2 heterostructure reveal a 39% reduction in the bandgap of 1T-TaS2 compared to the free-standing 1T-TaS2 case.

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Grisafe B, Zhao R, Jerry M, Robinson JA, Datta S. Investigation of the abrupt phase transition in 1T-TaS₂/MoS₂ heterostructures. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). doi: 10.1109/VLSI-TSA.2018.8403844