Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications

R. E. Banai; H. Lee; M. Lewinsohn; M. A. Motyka; R. Chandrasekharan; N. J. Podraza; J. R.S. Brownson; M. W. Horn

doi:10.1109/PVSC.2012.6317592

Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications

R. E. Banai
, H. Lee
, M. Lewinsohn
, M. A. Motyka
, R. Chandrasekharan
, N. J. Podraza
, J. R.S. Brownson
, M. W. Horn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Tin sulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high efficiency solar cells. Sputtered SnS thin films were deposited at target powers 105-155 W and total pressures of 5 to 60 mTorr in argon. X-ray diffraction patterns confirmed a dominant tin monosulfide phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 10⁵-10⁶ cm^-1.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	164-169
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2012.6317592
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6317592

Cite this

Banai, R. E., Lee, H., Lewinsohn, M., Motyka, M. A., Chandrasekharan, R., Podraza, N. J., Brownson, J. R. S., & Horn, M. W. (2012). Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 164-169). Article 6317592 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317592

@inproceedings{d901c97aba354ebf9abacbd4d94bb980,

title = "Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications",

abstract = "Tin sulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high efficiency solar cells. Sputtered SnS thin films were deposited at target powers 105-155 W and total pressures of 5 to 60 mTorr in argon. X-ray diffraction patterns confirmed a dominant tin monosulfide phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm-1.",

author = "Banai, \{R. E.\} and H. Lee and M. Lewinsohn and Motyka, \{M. A.\} and R. Chandrasekharan and Podraza, \{N. J.\} and Brownson, \{J. R.S.\} and Horn, \{M. W.\}",

year = "2012",

doi = "10.1109/PVSC.2012.6317592",

language = "English (US)",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "164--169",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Banai, RE, Lee, H, Lewinsohn, M, Motyka, MA, Chandrasekharan, R, Podraza, NJ, Brownson, JRS & Horn, MW 2012, Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317592, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 164-169, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317592

Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications. / Banai, R. E.; Lee, H.; Lewinsohn, M. et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 164-169 6317592 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications

AU - Banai, R. E.

AU - Lee, H.

AU - Lewinsohn, M.

AU - Motyka, M. A.

AU - Chandrasekharan, R.

AU - Podraza, N. J.

AU - Brownson, J. R.S.

AU - Horn, M. W.

PY - 2012

Y1 - 2012

N2 - Tin sulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high efficiency solar cells. Sputtered SnS thin films were deposited at target powers 105-155 W and total pressures of 5 to 60 mTorr in argon. X-ray diffraction patterns confirmed a dominant tin monosulfide phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm-1.

AB - Tin sulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high efficiency solar cells. Sputtered SnS thin films were deposited at target powers 105-155 W and total pressures of 5 to 60 mTorr in argon. X-ray diffraction patterns confirmed a dominant tin monosulfide phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm-1.

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SN - 9781467300643

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 164

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BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

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ER -

Banai RE, Lee H, Lewinsohn M, Motyka MA, Chandrasekharan R, Podraza NJ et al. Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 164-169. 6317592. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2012.6317592

Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications

Abstract

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UN SDGs

All Science Journal Classification (ASJC) codes

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