Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang; W. Windl; S. Lopatin; G. Duscher

doi:10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces

Tao Liang, W. Windl, S. Lopatin, G. Duscher

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

The atomic structure of the interface between Ge and SiO₂ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO₂ interface with probably small fractions of Ge in the oxide.

Original language	English (US)
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	143-146
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233657
State	Published - 2003
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: Sep 3 2003 → Sep 5 2003

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Other

Other	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	9/3/03 → 9/5/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2003.1233657

Cite this

Liang, T., Windl, W., Lopatin, S., & Duscher, G. (2003). Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 143-146). Article 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233657

Liang, Tao ; Windl, W. ; Lopatin, S. et al. / Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 143-146 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.",

author = "Tao Liang and W. Windl and S. Lopatin and G. Duscher",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

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language = "English (US)",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

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Liang, T, Windl, W, Lopatin, S & Duscher, G 2003, Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233657, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 9/3/03. https://doi.org/10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. / Liang, Tao; Windl, W.; Lopatin, S. et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 143-146 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lopatin, S.

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N2 - The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

AB - The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

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BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

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Liang T, Windl W, Lopatin S, Duscher G. Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 143-146. 1233657. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233657