(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

Xinyi Xia, Jian Sian Li, Ribhu Sharma, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Amanul Haque, Douglas Wolfe, Sushrut Modak, Leonid Chernyak, Mark Law, Ani Khachatrian, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Ga2O3 is expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga2O3. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (VGa), and antisites (GaO). With few experimental or simulation studies on single event effects (SEE) in Ga2O3 ,it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherInstitute of Physics
Number of pages23
ISBN (Electronic)9781607685395
StatePublished - 2022
Event242nd ECS Meeting - Atlanta, United States
Duration: Oct 9 2022Oct 13 2022

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


Conference242nd ECS Meeting
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • General Engineering


Dive into the research topics of '(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3'. Together they form a unique fingerprint.

Cite this