Ion beam techniques for low K materials characterization

H. Bakhru, A. Kumar, T. Kaplan, M. Delarosa, J. Fortin, G. R. Yang, T. M. Lu, S. Kim, C. Steinbruchel, X. Tang, J. A. Moore, B. Wang, J. McDonald, S. Nitta, V. Pisupatti, al et al

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO2:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

Original languageEnglish (US)
Pages (from-to)125-131
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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