Ion beam techniques for low K materials characterization

H. Bakhru; A. Kumar; T. Kaplan; M. Delarosa; J. Fortin; G. R. Yang; T. M. Lu; S. Kim; C. Steinbruchel; X. Tang; J. A. Moore; B. Wang; J. McDonald; S. Nitta; V. Pisupatti; al et al

doi:10.1557/proc-511-125

Ion beam techniques for low K materials characterization

H. Bakhru, A. Kumar, T. Kaplan, M. Delarosa, J. Fortin, G. R. Yang, T. M. Lu, S. Kim, C. Steinbruchel, X. Tang, J. A. Moore, B. Wang, J. McDonald, S. Nitta, V. Pisupatti, al et al

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Abstract

Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO₂ films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO₂:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

Original language	English (US)
Pages (from-to)	125-131
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	511
DOIs	https://doi.org/10.1557/proc-511-125
State	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{ee58077fc7574da7809615e001a4890b,

title = "Ion beam techniques for low K materials characterization",

abstract = "Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO2:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.",

author = "H. Bakhru and A. Kumar and T. Kaplan and M. Delarosa and J. Fortin and Yang, {G. R.} and Lu, {T. M.} and S. Kim and C. Steinbruchel and X. Tang and Moore, {J. A.} and B. Wang and J. McDonald and S. Nitta and V. Pisupatti and {et al}, al",

year = "1998",

doi = "10.1557/proc-511-125",

language = "English (US)",

volume = "511",

pages = "125--131",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Ion beam techniques for low K materials characterization

AU - Bakhru, H.

AU - Kumar, A.

AU - Kaplan, T.

AU - Delarosa, M.

AU - Fortin, J.

AU - Yang, G. R.

AU - Lu, T. M.

AU - Kim, S.

AU - Steinbruchel, C.

AU - Tang, X.

AU - Moore, J. A.

AU - Wang, B.

AU - McDonald, J.

AU - Nitta, S.

AU - Pisupatti, V.

AU - et al, al

PY - 1998

Y1 - 1998

N2 - Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO2:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

AB - Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous SiO2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including SiO2:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

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U2 - 10.1557/proc-511-125

DO - 10.1557/proc-511-125

M3 - Conference article

AN - SCOPUS:0032302791

SN - 0272-9172

VL - 511

SP - 125

EP - 131

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 15 April 1998

ER -

Ion beam techniques for low K materials characterization

Abstract

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