Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

H. Baratte; T. N. Jackson; P. M. Solomon; D. C. Latulipe; D. J. Frank; J. S. Moore

doi:10.1063/1.98657

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

H. Baratte, T. N. Jackson, P. M. Solomon, D. C. Latulipe, D. J. Frank, J. S. Moore

Research output: Contribution to journal › Article › peer-review

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Abstract

Electrical measurements of n⁺-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900°C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance-deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.

Original language	English (US)
Pages (from-to)	1459-1461
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	18
DOIs	https://doi.org/10.1063/1.98657
State	Published - 1987

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.98657

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title = "Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures",

abstract = "Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900°C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance-deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.",

author = "H. Baratte and Jackson, {T. N.} and Solomon, {P. M.} and Latulipe, {D. C.} and Frank, {D. J.} and Moore, {J. S.}",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

AU - Baratte, H.

AU - Jackson, T. N.

AU - Solomon, P. M.

AU - Latulipe, D. C.

AU - Frank, D. J.

AU - Moore, J. S.

PY - 1987

Y1 - 1987

N2 - Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900°C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance-deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.

AB - Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900°C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance-deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.

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JO - Applied Physics Letters

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ER -

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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