Ion implantation in Si/Si1-xGex epitaxial layers and superlattices

S. Mantl; B. Holländer; W. Jäger; B. Kabius; H. J. Jorke; E. Kasper

doi:10.1016/0168-583X(89)90814-8

Ion implantation in Si/Si_1-xGe_x epitaxial layers and superlattices

S. Mantl, B. Holländer, W. Jäger, B. Kabius, H. J. Jorke, E. Kasper

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The effect of ion implantation into molecular beam grown, strained Si/Si_0.8Ge_0.2 layers and Si/Si_0.5Ge_0.5 superlattices has been investigated by He ion channeling and transmission electron microscopy. Si implantation with energies of 750 keV at about 240° C in Si/Si_0.8Ge_0.2 layers led to gradual strain relaxation with increasing dose. The layers remained single crystalline even up to doses of 1 × 10¹⁶ Si/cm². Planar dechanneling results indicated the formation of dislocations. Experimentally determined dislocation spacings were compared with theoretical estimates based on van der Merwe's model, assuming strain relaxation by the formation of misfit dislocations. A five period Si/Si_0.5Ge_0.5 superlattice appeared to be much more sensitive to ion bombardment. Implantation of 1 × 10¹⁶ Si/cm² led to a nearly complete collapse of the single crystalline structure.

Original language	English (US)
Pages (from-to)	405-408
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(89)90814-8
State	Published - Mar 2 1989

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(89)90814-8

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title = "Ion implantation in Si/Si1-xGex epitaxial layers and superlattices",

abstract = "The effect of ion implantation into molecular beam grown, strained Si/Si0.8Ge0.2 layers and Si/Si0.5Ge0.5 superlattices has been investigated by He ion channeling and transmission electron microscopy. Si implantation with energies of 750 keV at about 240° C in Si/Si0.8Ge0.2 layers led to gradual strain relaxation with increasing dose. The layers remained single crystalline even up to doses of 1 × 1016 Si/cm2. Planar dechanneling results indicated the formation of dislocations. Experimentally determined dislocation spacings were compared with theoretical estimates based on van der Merwe's model, assuming strain relaxation by the formation of misfit dislocations. A five period Si/Si0.5Ge0.5 superlattice appeared to be much more sensitive to ion bombardment. Implantation of 1 × 1016 Si/cm2 led to a nearly complete collapse of the single crystalline structure.",

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T1 - Ion implantation in Si/Si1-xGex epitaxial layers and superlattices

AU - Mantl, S.

AU - Holländer, B.

AU - Jäger, W.

AU - Kabius, B.

AU - Jorke, H. J.

AU - Kasper, E.

PY - 1989/3/2

Y1 - 1989/3/2

N2 - The effect of ion implantation into molecular beam grown, strained Si/Si0.8Ge0.2 layers and Si/Si0.5Ge0.5 superlattices has been investigated by He ion channeling and transmission electron microscopy. Si implantation with energies of 750 keV at about 240° C in Si/Si0.8Ge0.2 layers led to gradual strain relaxation with increasing dose. The layers remained single crystalline even up to doses of 1 × 1016 Si/cm2. Planar dechanneling results indicated the formation of dislocations. Experimentally determined dislocation spacings were compared with theoretical estimates based on van der Merwe's model, assuming strain relaxation by the formation of misfit dislocations. A five period Si/Si0.5Ge0.5 superlattice appeared to be much more sensitive to ion bombardment. Implantation of 1 × 1016 Si/cm2 led to a nearly complete collapse of the single crystalline structure.

AB - The effect of ion implantation into molecular beam grown, strained Si/Si0.8Ge0.2 layers and Si/Si0.5Ge0.5 superlattices has been investigated by He ion channeling and transmission electron microscopy. Si implantation with energies of 750 keV at about 240° C in Si/Si0.8Ge0.2 layers led to gradual strain relaxation with increasing dose. The layers remained single crystalline even up to doses of 1 × 1016 Si/cm2. Planar dechanneling results indicated the formation of dislocations. Experimentally determined dislocation spacings were compared with theoretical estimates based on van der Merwe's model, assuming strain relaxation by the formation of misfit dislocations. A five period Si/Si0.5Ge0.5 superlattice appeared to be much more sensitive to ion bombardment. Implantation of 1 × 1016 Si/cm2 led to a nearly complete collapse of the single crystalline structure.

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JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Ion implantation in Si/Si_1-xGe_x epitaxial layers and superlattices

Abstract

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