Ion implantation in Si/Si_1-xGe_x epitaxial layers and superlattices

Keyphrases

• Ion Implantation 100%
• Single-crystalline 100%
• Superlattices 100%
• Si1-xGex 100%
• Epitaxial Layers 100%
• Strain Relaxation 100%
• Dislocation 50%
• Transmission Electron Microscopy 50%
• Crystalline Structure 50%
• Ion Channels 50%
• Ion Bombardment 50%
• Increased Dose 50%
• Superlattice 50%
• Misfit Dislocation 50%
• Strained Si 50%
• Ion Effect 50%
• Complete Collapse 50%
• Molecular Beam 50%
• He Ions 50%
• Dislocation Spacing 50%

Material Science

• Ion Implantation 100%
• Superlattice 100%
• Transmission Electron Microscopy 33%
• Dislocation (Crystal) 33%

Engineering

• Ion Implantation 100%
• Strain Relaxation 66%
• Channelling 33%
• Misfit Dislocation 33%