Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

Ryan J. Waskiewicz; Mark A. Anders; Patrick M. Lenahan; Aivars J. Lelis

doi:10.1109/TNS.2016.2622159

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

Ryan J. Waskiewicz
, Mark A. Anders
, Patrick M. Lenahan
, Aivars J. Lelis

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO₂ metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO₂ based MOSFETs and SiC/SiO₂ based MOSFETs.

Original language	English (US)
Article number	7707457
Pages (from-to)	197-203
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2016.2622159
State	Published - Jan 2017

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2016.2622159

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title = "Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance",

abstract = "Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.",

author = "Waskiewicz, \{Ryan J.\} and Anders, \{Mark A.\} and Lenahan, \{Patrick M.\} and Lelis, \{Aivars J.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

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doi = "10.1109/TNS.2016.2622159",

language = "English (US)",

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AU - Waskiewicz, Ryan J.

AU - Anders, Mark A.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

PY - 2017/1

Y1 - 2017/1

N2 - Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

AB - Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.

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ER -

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied with Electrically Detected Magnetic Resonance

Abstract

All Science Journal Classification (ASJC) codes

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