Isotopic Studies of Oxidation of Si3N4 and Si using SIMS

Honghua Du; Cheryl A. Houser; Richard E. Tressler; Karl E. Spear; Carlo G. Pantano

doi:10.1149/1.2086543

Isotopic Studies of Oxidation of Si₃N₄ and Si using SIMS

Honghua Du, Cheryl A. Houser, Richard E. Tressler, Karl E. Spear, Carlo G. Pantano

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	741-742
Number of pages	2
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	2
DOIs	https://doi.org/10.1149/1.2086543
State	Published - Feb 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2086543

Cite this

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title = "Isotopic Studies of Oxidation of Si3N4 and Si using SIMS",

author = "Honghua Du and Houser, {Cheryl A.} and Tressler, {Richard E.} and Spear, {Karl E.} and Pantano, {Carlo G.}",

year = "1990",

month = feb,

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language = "English (US)",

volume = "137",

pages = "741--742",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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AU - Spear, Karl E.

AU - Pantano, Carlo G.

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