KeV particle bombardment of semiconductors: A molecular-dynamics simulation

Roger Smith, Don E. Harrison, Barbara J. Garrison

Research output: Contribution to journalArticlepeer-review

144 Scopus citations


Molecular-dynamics simulations have been performed for the keV particle bombardment of Si{110} and Si{100} using a many-body potential developed by Tersoff. Energy and angle distributions are presented along with an analysis of the important ejection mechanisms. We have developed a computer logic that only integrates the equations of motion of the atoms that are struck, thus decreasing the computer time by a factor of 3 from a complete molecular-dynamics simulation.

Original languageEnglish (US)
Pages (from-to)93-101
Number of pages9
JournalPhysical Review B
Issue number1
StatePublished - 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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