TY - JOUR
T1 - Kinetic energy enhanced molecular beam epitaxial growth of Si{100}
AU - Garrison, Barbara J.
AU - Miller, Mitchel T.
AU - Brenner, Donald W.
N1 - Funding Information:
Of note for kinetic energy enhanced crystal growth is that the energetic beam does more than supply a localized heating source. An energetic Si atom can directly open a dimer on the Si{ 10 0} face thus leading to epitaxial growth on a femtosecond timescale rather than requiring the long times associated with surface diffusion processes. From these simulations it appears that the optimal energy range is 5-10 eV and that energies > 15 eV induce damage. It is impossible to ascertain from these simulations whether these defects can be easily annealed out. However, for heterostructures there will be mixing of the layers, The financial support of the Offlice of Naval Research, the National Science Foundation, and the IBM Program for the Support of the Materials and Processing Sciences is gratefully acknowledged. One of us (BJG) thanks the Camille and Henry Dreyfus Foundation for additional support. The Pennsylvania State University supplied a generous grant of computer time for these studies. Finally we would like to thank David M. Deaven for assistance with graphics.
PY - 1988/5/20
Y1 - 1988/5/20
N2 - For kinetic energy enhanced molecular beam epitaxial growth of Si{100} we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These unreconstructions occur on the femtosecond timescale rather than requiring the long times associated with surface diffusion. The opening energy range to be 5-10 eV.
AB - For kinetic energy enhanced molecular beam epitaxial growth of Si{100} we show that there are direct mechanisms of dimer opening, i.e. unreconstruction, that lead to epitaxial growth. These unreconstructions occur on the femtosecond timescale rather than requiring the long times associated with surface diffusion. The opening energy range to be 5-10 eV.
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U2 - 10.1016/0009-2614(88)87500-6
DO - 10.1016/0009-2614(88)87500-6
M3 - Article
AN - SCOPUS:0011566377
SN - 0009-2614
VL - 146
SP - 553
EP - 556
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 6
ER -