@inproceedings{6022f2677ea743728a1d9c02d8baf3a7,
title = "KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells",
abstract = "The storage device in spin-transfer torque MRAM (STT-MRAM) is the magnetic tunneling junction (MTJ) and several models for the MTJ have been proposed. However, a simulation framework that captures device physics at the atomistic level when simulating STT-MRAM at the bit-cell level is lacking. We propose a simulation framework (KNACK) which models the MTJ at the atomistic level using the Non-Equilibrium Green's Function (NEGF) formalism and uses the NEGF model in conjunction with our STT-MRAM bit-cell circuit model for circuit-level simulations. Our simulation framework accepts I-V and C-V characteristics of the access device input either as lookup tables or as compact models. We show that with appropriate device and bit-cell parameters, our simulation framework has the ability to capture MTJ physics and simulate different genres of STT-MRAM bit-cells with results in agreement with experiments.",
author = "Xuanyao Fong and Gupta, {Sumeet K.} and Mojumder, {Niladri N.} and Choday, {Sri Harsha} and Charles Augustine and Kaushik Roy",
year = "2011",
doi = "10.1109/SISPAD.2011.6035047",
language = "English (US)",
isbn = "9781612844169",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
pages = "51--54",
booktitle = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011",
note = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 ; Conference date: 08-09-2011 Through 10-09-2011",
}