Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

Yanglin Zhu, Cheng Yi Huang, Yu Wang, David Graf, Hsin Lin, Seng Huat Lee, John Singleton, Lujin Min, Johanna C. Palmstrom, Arun Bansil, Bahadur Singh, Zhiqiang Mao

Research output: Contribution to journalArticlepeer-review

Abstract

Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘH ≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications.

Original languageEnglish (US)
Article number346
JournalCommunications Physics
Volume6
Issue number1
DOIs
StatePublished - Dec 2023

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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