@inproceedings{506b1039c8bd4099a8d638c2830bb85c,
title = "Large-area epitaxial graphene: Effect of strain and thickness on electronic properties",
abstract = "The recent success of graphene transistor operation in the giga-hertz range has solidified the potential of this material for high speed electronic applications.1,2 Realization of a graphene technology on the production scale; however, requires the ability to synthesize large area graphene, and rapidly characterize the material's structural and electronic quality. We report a direct link between carrier mobility and Raman topography of epitaxial graphene grown on silicon carbide. We have examined epitaxial graphene with mobility values of 25-1100 cm2/V-s, and show that the Hall mobility of epitaxial graphene on the Si-face of SiC (SiC(0001)) is not only highly dependent on thickness uniformity, but also on mono-layer strain uniformity. It is not until the thickness and strain uniformity is approaches 50% of the device width that one is able to achieve mobility values higher than 1000 cm2/V-s.",
author = "Robinson, {Joshua A.} and Fanton, {Mark A.} and Stitt, {Joseph P.} and Thomas Stitt and David Snyder and Eric Frantz and Tedesco, {Joseph L.} and VanMil, {Brenda L.} and Glenn Jernigan and Paul Campbell and Myers-Ward, {Rachael L.} and Eddy, {Charles R.} and Gaskill, {D. Kurt}",
year = "2009",
doi = "10.1149/1.3119533",
language = "English (US)",
isbn = "9781566777131",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "107--109",
booktitle = "ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications",
edition = "5",
note = "1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society ; Conference date: 25-05-2009 Through 29-05-2009",
}