Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

Yang Wang, Binbin Liu, Yue Xin Huang, Sivakumar V. Mambakkam, Yong Wang, Shengyuan A. Yang, Xian Lei Sheng, Stephanie A. Law, John Q. Xiao

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

Original languageEnglish (US)
Article numberL241401
JournalPhysical Review B
Volume106
Issue number24
DOIs
StatePublished - Dec 15 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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