Large excitonic effects in group-IV sulfide monolayers

Blair R. Tuttle, Saeed M. Alhassan, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


Large exciton binding energies are a distinguishing feature of two-dimensional semiconductors because of reduced screening, potentially leading to unique optoelectronic applications. Here we use electronic structure methods to calculate the properties of a two-dimensional material class: group-IV monosulfides including SiS, GeS, and SnS. Bulk SiS is predicted to be a metastable layered material. Quasiparticle excitations are calculated with the G0W0 method and the Bethe-Salpeter equation is are used to include electron-hole interactions. For monolayers, strongly bound excitons are found below the quasiparticle absorption edge. The predicted excitonic binding energies are as high as 0.7 eV. Due to large excitonic effects, these group-IV sulfide monolayers have great potential for nanoscale optoelectronic applications.

Original languageEnglish (US)
Article number235405
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
StatePublished - Dec 3 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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