Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C

Min Gyu Kang; Kwang Hwan Cho; Young Ho Do; Young Jin Lee; Sahn Nahm; Seok Jin Yoon; Chong Yun Kang

doi:10.1063/1.4770307

Large in-plane permittivity of Ba_0.6Sr_0.4TiO ₃ thin films crystallized using excimer laser annealing at 300°C

Min Gyu Kang, Kwang Hwan Cho, Young Ho Do, Young Jin Lee, Sahn Nahm, Seok Jin Yoon, Chong Yun Kang

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We demonstrated a way to fabricate the crystalline Ba_0.6Sr _0.4TiO₃ (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (ε_r) between in-plane (1383) and out-of-plane (184) directions is observed.

Original language	English (US)
Article number	242910
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770307
State	Published - Dec 10 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4770307

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@article{c41cde7976cc4a91806fc8bdd41a67a6,

title = "Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C",

abstract = "We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.",

author = "Kang, {Min Gyu} and Cho, {Kwang Hwan} and {Ho Do}, Young and Lee, {Young Jin} and Sahn Nahm and Yoon, {Seok Jin} and Kang, {Chong Yun}",

note = "Funding Information: This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, the Base Convergent Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).",

year = "2012",

month = dec,

day = "10",

doi = "10.1063/1.4770307",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Ho Do, Young

AU - Lee, Young Jin

AU - Nahm, Sahn

AU - Yoon, Seok Jin

AU - Kang, Chong Yun

N1 - Funding Information: This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, the Base Convergent Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).

PY - 2012/12/10

Y1 - 2012/12/10

N2 - We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.

AB - We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.

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DO - 10.1063/1.4770307

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242910

ER -

Large in-plane permittivity of Ba_0.6Sr_0.4TiO ₃ thin films crystallized using excimer laser annealing at 300°C

Abstract

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