Large in-plane permittivity of Ba_0.6Sr_0.4TiO ₃ thin films crystallized using excimer laser annealing at 300°C

Keyphrases

• Permittivity 100%
• Annealed Films 100%
• Excimer Laser Annealing 100%
• Grain Size 50%
• Dielectric Properties 50%
• Thermal Annealing 50%
• Annealing Process 50%
• Sol-gel Process 50%
• Film-substrate Interface 50%
• Relative Dielectric Permittivity 50%
• Amorphous Layer 50%
• Laser Absorption 50%

Material Science

• Film 100%
• Thin Films 100%
• Permittivity 100%
• Annealing 100%
• Grain Size 25%
• Dielectric Property 25%
• Sol-Gel 25%

Engineering

• Thin Films 100%
• Excimer Laser 100%
• Dielectrics 66%
• Sol-Gel Process 33%
• Substrate Interface 33%