Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Yang Lv, James Kally, Tao Liu, Patrick Quarterman, Timothy Pillsbury, Brian J. Kirby, Alexander J. Grutter, Protyush Sahu, Julie A. Borchers, Mingzhong Wu, Nitin Samarth, Jian Ping Wang

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14 Scopus citations

Abstract

The unidirectional spin Hall and Rashba-Edelstein magnetoresistance is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque memory and logic devices due to its unique symmetry. Here, we report large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in a new material family - magnetic insulator/topological insulator Y3Fe5O12/Bi2Se3 bilayers. Such heterostructures exhibit a unidirectional spin Hall and Rashba-Edelstein magnetoresistance that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. The polarized neutron reflectometry reveals a unique temperature-dependent magnetic intermediary layer at the magnetic insulator-substrate interface and a proximity layer at the magnetic insulator-topological insulator interface. These polarized neutron reflectometry findings echo the magnetoresistance results in a comprehensive physics picture. Finally, we demonstrate a prototype memory device based on a magnetic insulator/topological insulator bilayer, using unidirectional spin Hall and Rashba-Edelstein magnetoresistance for electrical readout of current-induced magnetization switching aided by a small Oersted field.

Original languageEnglish (US)
Article number011406
JournalApplied Physics Reviews
Volume9
Issue number1
DOIs
StatePublished - Mar 1 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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