Abstract
Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.
| Original language | English (US) |
|---|---|
| Title of host publication | 16th International Workshop on Physics of Semiconductor Devices |
| Publisher | SPIE |
| ISBN (Print) | 9780819493002 |
| DOIs | |
| State | Published - 2012 |
| Event | 16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 - Kanpur, India Duration: Dec 19 2011 → Dec 22 2011 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 8549 |
| ISSN (Print) | 0277-786X |
| ISSN (Electronic) | 1996-756X |
Other
| Other | 16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 |
|---|---|
| Country/Territory | India |
| City | Kanpur |
| Period | 12/19/11 → 12/22/11 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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