Laser-silicon interaction for selective emitter formation in photovoltaics. I. Numerical model and validation

Keyphrases

• Numerical Model 100%
• Numerical Validation 100%
• Molten Zone 100%
• Selective Emitter 100%
• Doping Concentration 75%
• Processing Conditions 50%
• Processing Effects 50%
• Travel Speed 50%
• Laser Doping 50%
• Mathematical Model 25%
• Developing Process 25%
• Fluid Flow 25%
• Laser Power 25%
• Processing Parameters 25%
• Phosphorus Dopant 25%
• Profile Shape 25%
• Concentration Profile 25%
• Silicon Wafer 25%
• Power Output 25%
• Model Validation 25%
• Heat Conduction 25%
• Conduction-convection 25%
• Sheet Resistance 25%
• Process Map 25%
• Continuous-wave Laser 25%
• Parameter Influence 25%
• Heat Mass Transfer 25%
• Concentration Distribution 25%
• Heat Transport Mechanism 25%
• Transfer Flow 25%
• Mass Transport Mechanism 25%

Engineering

• Photovoltaics 100%
• Numerical Model 100%
• Dopant Concentration 100%
• Processing Condition 66%
• Travel Speed 66%
• Dopants 66%
• Heat Transport 33%
• Illustrates 33%
• Fluid Flow 33%
• Laser Power 33%
• Good Agreement 33%
• Processing Parameter 33%
• Concentration Profile 33%
• Silicon Wafer 33%
• Output Power 33%
• Continuous Wave 33%
• Sheet Resistance 33%
• Process Map 33%
• Concentration Distribution 33%
• Thermodynamics 33%

Material Science

• Silicon 100%
• Photovoltaics 100%
• Doping (Additives) 100%
• Fluid Flow 20%
• Silicon Wafer 20%