Lasing in the space charge limited current regime

Alex J. Grede; Noel C. Giebink

doi:10.1103/PhysRevB.103.L121301

Lasing in the space charge limited current regime

Alex J. Grede, Noel C. Giebink

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We introduce an analytical model for ideal organic laser diodes based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. Expressions for the threshold current and voltage agree well with drift-diffusion modeling of complete p-i-n devices and an analytical bound is established for laser operation in the presence of annihilation and excited-state absorption losses. These results establish a foundation for the development of organic laser diode technology.

Original language	English (US)
Article number	L121301
Journal	Physical Review B
Volume	103
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.103.L121301
State	Published - Mar 3 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.103.L121301

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title = "Lasing in the space charge limited current regime",

abstract = "We introduce an analytical model for ideal organic laser diodes based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. Expressions for the threshold current and voltage agree well with drift-diffusion modeling of complete p-i-n devices and an analytical bound is established for laser operation in the presence of annihilation and excited-state absorption losses. These results establish a foundation for the development of organic laser diode technology.",

author = "Grede, {Alex J.} and Giebink, {Noel C.}",

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AB - We introduce an analytical model for ideal organic laser diodes based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. Expressions for the threshold current and voltage agree well with drift-diffusion modeling of complete p-i-n devices and an analytical bound is established for laser operation in the presence of annihilation and excited-state absorption losses. These results establish a foundation for the development of organic laser diode technology.

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Lasing in the space charge limited current regime

Abstract

All Science Journal Classification (ASJC) codes

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