Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang; J. W. Johnson; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; K. P. Lee; S. J. Pearton

doi:10.1063/1.1346622

Lateral Al_xGa_1-xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, K. P. Lee, S. J. Pearton

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104 Scopus citations

Abstract

Al_xGa_1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p⁺-implanted guard rings and rectifying contact overlap onto an SiO₂ passivation layer. The reverse breakdown voltage (V_B) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al_0.25Ga_0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 10⁵ V cm^-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V_B)²/R_ON, where R_ON is the on-state resistance, was in the range 94-268 MW cm^-2 for all the devices.

Original language	English (US)
Pages (from-to)	823-825
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.1346622
State	Published - Feb 5 2001

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1346622

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title = "Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage",

abstract = "AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.",

author = "Zhang, {A. P.} and Johnson, {J. W.} and F. Ren and J. Han and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Redwing, {J. M.} and Lee, {K. P.} and Pearton, {S. J.}",

year = "2001",

month = feb,

day = "5",

doi = "10.1063/1.1346622",

language = "English (US)",

volume = "78",

pages = "823--825",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

AU - Zhang, A. P.

AU - Johnson, J. W.

AU - Ren, F.

AU - Han, J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Redwing, J. M.

AU - Lee, K. P.

AU - Pearton, S. J.

PY - 2001/2/5

Y1 - 2001/2/5

N2 - AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.

AB - AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Lateral Al_xGa_1-xN power rectifiers with 9.7 kV reverse breakdown voltage

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