Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang; J. W. Johnson; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; K. P. Lee; S. J. Pearton

doi:10.1063/1.1346622

Lateral Al_xGa_1-xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang
, J. W. Johnson
, F. Ren
, J. Han
, A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, J. M. Redwing
, K. P. Lee
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

Al_xGa_1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p⁺-implanted guard rings and rectifying contact overlap onto an SiO₂ passivation layer. The reverse breakdown voltage (V_B) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al_0.25Ga_0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 10⁵ V cm^-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V_B)²/R_ON, where R_ON is the on-state resistance, was in the range 94-268 MW cm^-2 for all the devices.

Original language	English (US)
Pages (from-to)	823-825
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.1346622
State	Published - Feb 5 2001

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1346622

Cite this

@article{0e6bc6bc3a574ddd989aec268038435c,

title = "Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage",

abstract = "AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.",

author = "Zhang, \{A. P.\} and Johnson, \{J. W.\} and F. Ren and J. Han and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Redwing, \{J. M.\} and Lee, \{K. P.\} and Pearton, \{S. J.\}",

year = "2001",

month = feb,

day = "5",

doi = "10.1063/1.1346622",

language = "English (US)",

volume = "78",

pages = "823--825",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

AU - Zhang, A. P.

AU - Johnson, J. W.

AU - Ren, F.

AU - Han, J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Redwing, J. M.

AU - Lee, K. P.

AU - Pearton, S. J.

PY - 2001/2/5

Y1 - 2001/2/5

N2 - AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.

AB - AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.

UR - https://www.scopus.com/pages/publications/20244389668

UR - https://www.scopus.com/pages/publications/20244389668#tab=citedBy

U2 - 10.1063/1.1346622

DO - 10.1063/1.1346622

M3 - Article

AN - SCOPUS:20244389668

SN - 0003-6951

VL - 78

SP - 823

EP - 825

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Lateral Al_xGa_1-xN power rectifiers with 9.7 kV reverse breakdown voltage

Abstract

All Science Journal Classification (ASJC) codes

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