Lateral MIS Tunnel Transistor

Jerzy Ruzyllo

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


A new device structure called the Lateral MIS Tunnel Transistor (LMISTT) is proposed, and its basic features and characteristics are presented. In this device, effects related to the lateral conduction in MIS tunnel structures are implemented. The device is featured by very simple processing, and shows promise in a variety of applications, including very large scale integration high speed IC’s.

Original languageEnglish (US)
Pages (from-to)197-199
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 1980

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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