Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

Daniel M. Schaadt; Eric J. Miller; Edward T. Yu; Joan M. Redwing

doi:10.1063/1.1335840

Lateral variations in threshold voltage of an Al_xGa_1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

Daniel M. Schaadt, Eric J. Miller, Edward T. Yu, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Local dC/dV spectroscopy performed in a scanning capacitance microscope (SCM) was used to map, quantitatively and with high spatial resolution (∼ 50nm), lateral variations in the threshold voltage of an Al_xGa_1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Scanning capacitance and the associated threshold voltage images show small round features less than 150 nm in diameter with a corresponding shift in threshold voltage of about 1.5-2 V, and larger features several microns in size with a corresponding shift in threshold voltage of approximately 1 V. The small features in the SCM and threshold voltage images are consistent with the presence of charged threading dislocations, while the variations in threshold voltage over large areas could be a result of thickness and/or composition variations in the Al_xGa_1-xN layer.

Original language	English (US)
Pages (from-to)	88-90
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	1
DOIs	https://doi.org/10.1063/1.1335840
State	Published - Jan 1 2001

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1335840

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title = "Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy",

abstract = "Local dC/dV spectroscopy performed in a scanning capacitance microscope (SCM) was used to map, quantitatively and with high spatial resolution (∼ 50nm), lateral variations in the threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Scanning capacitance and the associated threshold voltage images show small round features less than 150 nm in diameter with a corresponding shift in threshold voltage of about 1.5-2 V, and larger features several microns in size with a corresponding shift in threshold voltage of approximately 1 V. The small features in the SCM and threshold voltage images are consistent with the presence of charged threading dislocations, while the variations in threshold voltage over large areas could be a result of thickness and/or composition variations in the AlxGa1-xN layer.",

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AU - Schaadt, Daniel M.

AU - Miller, Eric J.

AU - Yu, Edward T.

AU - Redwing, Joan M.

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N2 - Local dC/dV spectroscopy performed in a scanning capacitance microscope (SCM) was used to map, quantitatively and with high spatial resolution (∼ 50nm), lateral variations in the threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Scanning capacitance and the associated threshold voltage images show small round features less than 150 nm in diameter with a corresponding shift in threshold voltage of about 1.5-2 V, and larger features several microns in size with a corresponding shift in threshold voltage of approximately 1 V. The small features in the SCM and threshold voltage images are consistent with the presence of charged threading dislocations, while the variations in threshold voltage over large areas could be a result of thickness and/or composition variations in the AlxGa1-xN layer.

AB - Local dC/dV spectroscopy performed in a scanning capacitance microscope (SCM) was used to map, quantitatively and with high spatial resolution (∼ 50nm), lateral variations in the threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Scanning capacitance and the associated threshold voltage images show small round features less than 150 nm in diameter with a corresponding shift in threshold voltage of about 1.5-2 V, and larger features several microns in size with a corresponding shift in threshold voltage of approximately 1 V. The small features in the SCM and threshold voltage images are consistent with the presence of charged threading dislocations, while the variations in threshold voltage over large areas could be a result of thickness and/or composition variations in the AlxGa1-xN layer.

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Lateral variations in threshold voltage of an Al_xGa_1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

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