TY - GEN
T1 - Lead-free piezoelectric ceramics vs. PZT?
AU - Zhang, Shujun
AU - Xia, Ru
AU - Shrout, Thomas R.
PY - 2006
Y1 - 2006
N2 - Investigations in the development of lead-free piezoelectric ceramics have recently claimed properties comparable to that of PZT-based materials. In this work, the dielectric and piezoelectric properties of the various systems were contrasted in relation to their respective Curie temperatures. Though comparable with respect to Tc, enhanced properties reported in the K,NaNbO 3 family are the result of increased polarizability associated with the Torthor-tertragonal polymorphic phase transition being compositionally shifted downward and not from a morphotropic phase boundary (MPB) as widely reported. As expected, the properties are strongly temperature dependent unlike that observed for MPB systems. Analogous to PZT, enhanced properties are noted for MPB compositions in the Na,BiTiO3-BaTiO 3 and the ternary system with K,BiTiO3, but offer properties significantly lower than that of PZTs. The consequence of a ferroelectric to antiferroelectric transition well below TC further limits their usefulness.
AB - Investigations in the development of lead-free piezoelectric ceramics have recently claimed properties comparable to that of PZT-based materials. In this work, the dielectric and piezoelectric properties of the various systems were contrasted in relation to their respective Curie temperatures. Though comparable with respect to Tc, enhanced properties reported in the K,NaNbO 3 family are the result of increased polarizability associated with the Torthor-tertragonal polymorphic phase transition being compositionally shifted downward and not from a morphotropic phase boundary (MPB) as widely reported. As expected, the properties are strongly temperature dependent unlike that observed for MPB systems. Analogous to PZT, enhanced properties are noted for MPB compositions in the Na,BiTiO3-BaTiO 3 and the ternary system with K,BiTiO3, but offer properties significantly lower than that of PZTs. The consequence of a ferroelectric to antiferroelectric transition well below TC further limits their usefulness.
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U2 - 10.1109/ISAF.2006.4349278
DO - 10.1109/ISAF.2006.4349278
M3 - Conference contribution
AN - SCOPUS:50249162625
SN - 142441332X
SN - 9781424413324
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
T2 - 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
Y2 - 30 July 2006 through 3 August 2006
ER -