Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

P. M. Lenahan; J. J. Mele; R. K. Lowry; D. Woodbury

doi:10.1016/S0022-3093(99)00851-0

Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

P. M. Lenahan, J. J. Mele, R. K. Lowry, D. Woodbury

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO₂ on silicon.

Original language	English (US)
Pages (from-to)	835-839
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 B
DOIs	https://doi.org/10.1016/S0022-3093(99)00851-0
State	Published - 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(99)00851-0

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title = "Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films",

abstract = "We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.",

author = "Lenahan, {P. M.} and Mele, {J. J.} and Lowry, {R. K.} and D. Woodbury",

year = "2000",

doi = "10.1016/S0022-3093(99)00851-0",

language = "English (US)",

volume = "266-269 B",

pages = "835--839",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

AU - Lenahan, P. M.

AU - Mele, J. J.

AU - Lowry, R. K.

AU - Woodbury, D.

PY - 2000

Y1 - 2000

N2 - We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.

AB - We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.

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U2 - 10.1016/S0022-3093(99)00851-0

DO - 10.1016/S0022-3093(99)00851-0

M3 - Article

AN - SCOPUS:0001574620

SN - 0022-3093

VL - 266-269 B

SP - 835

EP - 839

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

Abstract

All Science Journal Classification (ASJC) codes

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