Abstract
We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 835-839 |
| Number of pages | 5 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 266-269 B |
| DOIs | |
| State | Published - 2000 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Fingerprint
Dive into the research topics of 'Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver