TY - GEN
T1 - Leveraging value locality for efficient design of a hybrid cache in multicore processors
AU - Arjomand, Mohammad
AU - Jadidi, Amin
AU - Kandemir, Mahmut T.
AU - Das, Chita R.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/12/13
Y1 - 2017/12/13
N2 - Owing to negligible leakage current, high density and superior scalability, Spin-Transfer Torque RAM (STT-RAM) technology becomes one of the promising candidates for low power and high capacity on-chip caches in multicore systems. While STT-RAM read access latency is comparable to that of SRAM, write operations in STT-RAM are more challenging: writes are slow, consume a large energy, and the lifetime of STT-RAM is limited by the number of write operations to each cell. To overcome these challenges in STT-RAM caches, this paper explores the potential of eliminating redundant writes using the phenomenon of frequent value locality (FVL). According to FLV, few distinct values appear in a large fraction of memory transactions, with emphasis on cache memories in this work. By leveraging frequent value locality, we propose a novel value-based hybrid (STT-RAM +, SRAM) cache that has benefits of both SRAM and STT-RAM technologies - i.e., it is high-performance, power-efficient, and scalable. Our evaluation results for a 8-core chip-multiprocessor with 6MB last-level cache show that our proposed design is able to reduce power consumption of a STT-RAM cache by up to 90% (an average of 82%), enhances its lifetime by up to 52% (29% on average), and improves the system performance by up 30% (11% on average), for a wide range of multi-threaded and multi-program workloads.
AB - Owing to negligible leakage current, high density and superior scalability, Spin-Transfer Torque RAM (STT-RAM) technology becomes one of the promising candidates for low power and high capacity on-chip caches in multicore systems. While STT-RAM read access latency is comparable to that of SRAM, write operations in STT-RAM are more challenging: writes are slow, consume a large energy, and the lifetime of STT-RAM is limited by the number of write operations to each cell. To overcome these challenges in STT-RAM caches, this paper explores the potential of eliminating redundant writes using the phenomenon of frequent value locality (FVL). According to FLV, few distinct values appear in a large fraction of memory transactions, with emphasis on cache memories in this work. By leveraging frequent value locality, we propose a novel value-based hybrid (STT-RAM +, SRAM) cache that has benefits of both SRAM and STT-RAM technologies - i.e., it is high-performance, power-efficient, and scalable. Our evaluation results for a 8-core chip-multiprocessor with 6MB last-level cache show that our proposed design is able to reduce power consumption of a STT-RAM cache by up to 90% (an average of 82%), enhances its lifetime by up to 52% (29% on average), and improves the system performance by up 30% (11% on average), for a wide range of multi-threaded and multi-program workloads.
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U2 - 10.1109/ICCAD.2017.8203753
DO - 10.1109/ICCAD.2017.8203753
M3 - Conference contribution
AN - SCOPUS:85043534442
T3 - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
SP - 1
EP - 8
BT - 2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017
Y2 - 13 November 2017 through 16 November 2017
ER -