Leveraging Voltage-Controlled Magnetic Anisotropy to Solve Sneak Path Issues in Crossbar Arrays

Kezhou Yang, Abhronil Sengupta

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In crossbar array structures, which serves as an 'in-memory' compute engine for artificial intelligence (AI) hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar programming schemes have been proposed, device-level innovations leveraging nonlinear switching characteristics of the cross-point devices are still under exploration to improve the energy eff iciency of the write process. In this work, a spintronic device design based on magnetic tunnel junction (MTJ) exploiting the use of voltage-controlled magnetic anisotropy (VCMA) effect is proposed as a solution to the write sneak path problem. In addition, insights are provided regarding appropriate operating voltage conditions to preserve the robustness of the magnetization trajectory during switching, which is critical for proper switching probability manipulation.

Original languageEnglish (US)
Pages (from-to)2021-2027
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume70
Issue number4
DOIs
StatePublished - Apr 1 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this