Links between defect chemistry, conduction, and lifetime in heavily Nb doped lead zirconate titanate films

Phase pure PbZr0.52Ti0.48O3 (PZT) films with up to 13 mol. % Nb were prepared on Pt-coated Si substrates using chemical solution deposition; charge compensation for Nb was accomplished by reducing the concentration of lead in the film. For high Nb doping levels, (1) superoxidation of the PZT film surface makes the PZT/Pt interface more p-type and, hence reduces electron injection over the Schottky barrier, (2) the bulk charge transport mechanism changes from electron trapping by Ti4+ to hole migration between lead vacancies, and (3) the ionic conductivity due to migration of oxygen vacancies decreases. For ≤ 6 mol. % Nb, electrical degradation was controlled via field-induced accumulation of oxygen vacancies near the cathode, which, in turn, leads to Schottky barrier lowering and electron trapping by Ti4+. In phase pure 13 mol. % Nb doped PZT films, on the other hand, the increase in the leakage current during electrical degradation was dominated by hole migration between lead vacancies (2 [V P b ″] ∼ [h •]). A much lower lifetime and drastic increase in the leakage current upon electrical degradation was observed in mixed phase PNZT films, which was attributed to (1) a more electrically conductive pyrochlore phase and (2) a high concentration of lead vacancies.