Liquid Phase Epitaxy (LPE) formation of localized high quality and mobility Ge & SiGe by high dose ge-implantation with laser melt annealing for 10nm and 7nm node CMOS technology

John Borland, Michiro Sugitani, Peter Oesterlin, Walt Johnson, Temel Buyuklimanli, Robert Hengstebeck, Ethan Kennon, Kevin Jones, Abhijeet Joshi

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

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Material Science

Engineering