Lithography-free fabrication of graphene devices

N. Staley; H. Wang; C. Puls; J. Forster; T. N. Jackson; K. McCarthy; B. Clouser; Y. Liu

doi:10.1063/1.2719607

Lithography-free fabrication of graphene devices

N. Staley, H. Wang, C. Puls, J. Forster, T. N. Jackson, K. McCarthy, B. Clouser, Y. Liu

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n -layer graphene (nLG), with n=1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG.

Original language	English (US)
Article number	143518
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2719607
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2719607

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title = "Lithography-free fabrication of graphene devices",

abstract = "We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n -layer graphene (nLG), with n=1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG.",

author = "N. Staley and H. Wang and C. Puls and J. Forster and Jackson, {T. N.} and K. McCarthy and B. Clouser and Y. Liu",

note = "Funding Information: The authors would like to acknowledge the useful discussions with Jun Zhu, Jainendra Jain, Jorge Sofo, Peter Eklund, Paul Lammert, and Paul Campbell, and technical assistance from Dalong Zhao and Awnish Gupta. They would also like to thank Theresa Meyer and Tom Mallouk for the use of their optical microscopes. This work is supported in part by DOE under Grant No. DE-FG02-04ER46159.",

year = "2007",

doi = "10.1063/1.2719607",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Lithography-free fabrication of graphene devices

AU - Staley, N.

AU - Wang, H.

AU - Puls, C.

AU - Forster, J.

AU - Jackson, T. N.

AU - McCarthy, K.

AU - Clouser, B.

AU - Liu, Y.

N1 - Funding Information: The authors would like to acknowledge the useful discussions with Jun Zhu, Jainendra Jain, Jorge Sofo, Peter Eklund, Paul Lammert, and Paul Campbell, and technical assistance from Dalong Zhao and Awnish Gupta. They would also like to thank Theresa Meyer and Tom Mallouk for the use of their optical microscopes. This work is supported in part by DOE under Grant No. DE-FG02-04ER46159.

PY - 2007

Y1 - 2007

N2 - We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n -layer graphene (nLG), with n=1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG.

AB - We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n -layer graphene (nLG), with n=1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG.

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ER -

Lithography-free fabrication of graphene devices

Abstract

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