Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst

Chad M. Eichfeld; Stephan S.A. Gerstl; Ty Prosa; Yue Ke; Joan M. Redwing; Suzanne E. Mohney

doi:10.1088/0957-4484/23/21/215205

Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst

Chad M. Eichfeld, Stephan S.A. Gerstl, Ty Prosa, Yue Ke, Joan M. Redwing, Suzanne E. Mohney

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vaporliquidsolid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2×10 ²⁰cm ^-3, which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

Original language	English (US)
Article number	215205
Journal	Nanotechnology
Volume	23
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/23/21/215205
State	Published - Jun 1 2012

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/23/21/215205

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title = "Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst",

abstract = "Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vaporliquidsolid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2×10 20cm -3, which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.",

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AU - Eichfeld, Chad M.

AU - Gerstl, Stephan S.A.

AU - Prosa, Ty

AU - Ke, Yue

AU - Redwing, Joan M.

AU - Mohney, Suzanne E.

PY - 2012/6/1

Y1 - 2012/6/1

N2 - Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vaporliquidsolid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2×10 20cm -3, which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

AB - Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vaporliquidsolid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2×10 20cm -3, which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

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Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst

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