TY - JOUR
T1 - Local optical control of ferromagnetism and chemical potential in a topological insulator
AU - Yeats, Andrew L.
AU - Mintun, Peter J.
AU - Pan, Yu
AU - Richardella, Anthony
AU - Buckley, Bob B.
AU - Samarth, Nitin
AU - Awschalom, David D.
N1 - Funding Information:
ACKNOWLEDGMENTS. We thank J. van Bree for useful discussions. This work is supported by Office of Naval Research Grants N00014-15-1-2369 and N00014-15-1-2370, Air Force Office of Scientific Research Multidisciplinary University Research Initiative Grant FA9550-14-1-0231, NSF Materials Research Science and Engineering Centers Grant NSF-DMR-1420709, and National Science Foundation Grants NSF-DMR-1306300 and NSF-DMR-1306510. This study is based in part on research conducted at The Pennsylvania State University 2D Crystal Consortium–Materials Innovation Platform (2DCC-MIP), which is supported by NSF Cooperative Agreement DMR-1539916. This material is based on work supported by Laboratory Directed Research and Development (LDRD) funding from Argonne National Laboratory, provided by the Director, Office of Science, of the US Department of Energy under Contract DE-AC02-06CH11357.
Publisher Copyright:
© 2017, National Academy of Sciences. All rights reserved.
PY - 2017/9/26
Y1 - 2017/9/26
N2 - Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.
AB - Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.
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U2 - 10.1073/pnas.1713458114
DO - 10.1073/pnas.1713458114
M3 - Article
C2 - 28900003
AN - SCOPUS:85029893951
SN - 0027-8424
VL - 114
SP - 10379
EP - 10383
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
IS - 39
ER -