TY - JOUR
T1 - Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy
AU - Choi, Sukwon
AU - Griffin, Benjamin A.
N1 - Funding Information:
This work was supported by the Laboratory Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy''s National Nuclear Security Administration under Contract DE-AC04-94AL85000. The authors acknowledge management support from K Ortiz and C T Sullivan. The authors would also like to thank S Graham at Georgia Institute of Technology for providing support in Raman spectroscopy measurements.
Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2016/1/6
Y1 - 2016/1/6
N2 - Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.
AB - Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.
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U2 - 10.1088/0960-1317/26/2/025009
DO - 10.1088/0960-1317/26/2/025009
M3 - Article
AN - SCOPUS:84960155882
SN - 0960-1317
VL - 26
JO - Journal of Micromechanics and Microengineering
JF - Journal of Micromechanics and Microengineering
IS - 2
M1 - 025009
ER -