Localization in single-walled carbon nanotubes

M. S. Fuhrer; Marvin L. Cohen; A. Zettl; Vincent Crespi

doi:10.1016/S0038-1098(98)00520-1

Localization in single-walled carbon nanotubes

M. S. Fuhrer, Marvin L. Cohen, A. Zettl, Vincent Crespi

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51 Scopus citations

Abstract

We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.

Original language	English (US)
Pages (from-to)	105-109
Number of pages	5
Journal	Solid State Communications
Volume	109
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1098(98)00520-1
State	Published - Dec 14 1998

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00520-1

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title = "Localization in single-walled carbon nanotubes",

abstract = "We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.",

author = "Fuhrer, {M. S.} and Cohen, {Marvin L.} and A. Zettl and Vincent Crespi",

note = "Funding Information: We thank Prof. R.E. Smalley for kindly providing some of the samples used in this study, and Prof. S.G. Louie and P. Delaney for useful discussion. This work was supported in part by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the US Department of Energy under Contract No. DE-AC03-76SF00098.",

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T1 - Localization in single-walled carbon nanotubes

AU - Fuhrer, M. S.

AU - Cohen, Marvin L.

AU - Zettl, A.

AU - Crespi, Vincent

N1 - Funding Information: We thank Prof. R.E. Smalley for kindly providing some of the samples used in this study, and Prof. S.G. Louie and P. Delaney for useful discussion. This work was supported in part by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the US Department of Energy under Contract No. DE-AC03-76SF00098.

PY - 1998/12/14

Y1 - 1998/12/14

N2 - We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.

AB - We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.

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Localization in single-walled carbon nanotubes

Abstract

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