Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

Dong Hui Xu; Jin Hua Gao; Chao Xing Liu; Jin Hua Sun; Fu Chun Zhang; Yi Zhou

doi:10.1103/PhysRevB.89.195104

Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

Dong Hui Xu, Jin Hua Gao, Chao Xing Liu, Jin Hua Sun, Fu Chun Zhang, Yi Zhou

Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.

Original language	English (US)
Article number	195104
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	89
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.89.195104
State	Published - May 7 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.89.195104

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title = "Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells",

abstract = "We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.",

author = "Xu, {Dong Hui} and Gao, {Jin Hua} and Liu, {Chao Xing} and Sun, {Jin Hua} and Zhang, {Fu Chun} and Yi Zhou",

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doi = "10.1103/PhysRevB.89.195104",

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AU - Xu, Dong Hui

AU - Gao, Jin Hua

AU - Liu, Chao Xing

AU - Sun, Jin Hua

AU - Zhang, Fu Chun

AU - Zhou, Yi

PY - 2014/5/7

Y1 - 2014/5/7

N2 - We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.

AB - We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.

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Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

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