@inproceedings{3076dbdf87494b22b53b86671eb4ef03,
title = "Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs",
abstract = "We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.",
author = "Campbell, {J. P.} and Lenahan, {P. M.} and Krishnan, {A. T.} and S. Krishnan",
year = "2007",
doi = "10.1109/RELPHY.2007.369942",
language = "English (US)",
isbn = "1424409195",
series = "Annual Proceedings - Reliability Physics (Symposium)",
pages = "503--510",
booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",
note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",
}