Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

D. Nandi, Inti Sodemann, K. Shain, G. H. Lee, K. F. Huang, Cui Zu Chang, Yunbo Ou, S. P. Lee, J. Ward, J. S. Moodera, P. Kim, A. Yacoby

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We report magnetotransport measurements on magnetically doped (Bi,Sb)2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

Original languageEnglish (US)
Article number085151
JournalPhysical Review B
Issue number8
StatePublished - Feb 26 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Logarithmic singularities and quantum oscillations in magnetically doped topological insulators'. Together they form a unique fingerprint.

Cite this