Long range interaction between a He atom and a semiconductor surface

G. Vidali; Milton Walter Cole

doi:10.1016/0167-2584(81)90245-0

Long range interaction between a He atom and a semiconductor surface

G. Vidali, Milton Walter Cole

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Abstract

The dispersion interaction between a He atom and a solid has the form V ∼ -C₃z^-3 at large distance. We calculate the value of C₃ for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈₂(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C₃ obtained from experimental data.

Original language	English (US)
Journal	Surface Science Letters
Volume	107
Issue number	2-3
DOIs	https://doi.org/10.1016/0167-2584(81)90245-0
State	Published - Jun 1 1981

All Science Journal Classification (ASJC) codes

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

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10.1016/0167-2584(81)90245-0

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title = "Long range interaction between a He atom and a semiconductor surface",

abstract = "The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.",

author = "G. Vidali and Cole, {Milton Walter}",

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AU - Vidali, G.

AU - Cole, Milton Walter

PY - 1981/6/1

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N2 - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

AB - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

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U2 - 10.1016/0167-2584(81)90245-0

DO - 10.1016/0167-2584(81)90245-0

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VL - 107

JO - Surface Science Letters

JF - Surface Science Letters

IS - 2-3

ER -

Long range interaction between a He atom and a semiconductor surface

Abstract

All Science Journal Classification (ASJC) codes

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