Long range interaction between a He atom and a semiconductor surface

G. Vidali; M. W. Cole

doi:10.1016/0039-6028(81)90529-X

Long range interaction between a He atom and a semiconductor surface

G. Vidali
, M. W. Cole

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The dispersion interaction between a He atom and a solid has the form V ~ -C₃z^-3 at large distance. We calculate the value of C₃ for several cases (Ge, Si, GaAs, and diamond) using experimental results for ε₂(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C₃ obtained from experimental data.

Original language	English (US)
Pages (from-to)	L374-L378
Journal	Surface Science
Volume	107
Issue number	2-3
DOIs	https://doi.org/10.1016/0039-6028(81)90529-X
State	Published - Jun 1 1981

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(81)90529-X

Cite this

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title = "Long range interaction between a He atom and a semiconductor surface",

abstract = "The dispersion interaction between a He atom and a solid has the form V \textasciitilde{} -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ε2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.",

author = "G. Vidali and Cole, \{M. W.\}",

year = "1981",

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doi = "10.1016/0039-6028(81)90529-X",

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journal = "Surface Science",

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T1 - Long range interaction between a He atom and a semiconductor surface

AU - Vidali, G.

AU - Cole, M. W.

PY - 1981/6/1

Y1 - 1981/6/1

N2 - The dispersion interaction between a He atom and a solid has the form V ~ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ε2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

AB - The dispersion interaction between a He atom and a solid has the form V ~ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ε2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

UR - https://www.scopus.com/pages/publications/24244439438

UR - https://www.scopus.com/pages/publications/24244439438#tab=citedBy

U2 - 10.1016/0039-6028(81)90529-X

DO - 10.1016/0039-6028(81)90529-X

M3 - Article

AN - SCOPUS:24244439438

SN - 0039-6028

VL - 107

SP - L374-L378

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Long range interaction between a He atom and a semiconductor surface

Abstract

All Science Journal Classification (ASJC) codes

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