Ferroelectric-based electronic devices have excellent low-energy characteristics due to the highly insulating property, in which the Joule heating can be neglected. The recent discovery of electrically switchable cracks in ferroelectric/alloy film heterostructure gave rise to a new way to construct transistor, where the opening and closing of crack switched the channel current off and on. Here, we observed the complementary switching of cracks for the first time, and demonstrated a complementary inverter without any additional process to set different types of transistors, which was implemented by forming the n- and p-type transistor in conventional complementary metal oxide semiconductor (CMOS) technology. The complementary states were generated spontaneously once the cracks were induced and varied with the change of applied input voltage polarity. The low ON resistance and near-zero OFF state leakage current result in the high current on/off ratio (~107) and allow for the low dynamic and static power dissipation. Further, the switching of cracks is coupled to the surrounding ferroelectric polarization states, offering the non-destructive readout operation. We believe that our work provides a very simple route to build complementary logic gates and paves a way for the energy-efficient electronic devices, while promoting the “crack nanoelectronics”.
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Electrical and Electronic Engineering