Low-energy hydrogen implantation for silicon Schottky barrier modification

S. Ashok; SA Ringel

doi:10.1016/0042-207X(86)90140-5

Low-energy hydrogen implantation for silicon Schottky barrier modification

S. Ashok, SA Ringel

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

Original language	English (US)
Pages (from-to)	917-920
Number of pages	4
Journal	Vacuum
Volume	36
Issue number	11-12
DOIs	https://doi.org/10.1016/0042-207X(86)90140-5
State	Published - 1986

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/0042-207X(86)90140-5

Cite this

@article{bb1a99e9d69446f59033b95d3b14bb45,

title = "Low-energy hydrogen implantation for silicon Schottky barrier modification",

abstract = "Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.",

author = "S. Ashok and SA Ringel",

note = "Funding Information: Solid State Electronics Center, Plymouth, MN, for the dopant and argon implantation. We would also like to acknowledge the keen interest of Dr B J Baliga in the investigation. This work was supported by grants from the US National Science Foundation (No ECS-8305646) and the General Electric Corporate Research and Development.",

year = "1986",

doi = "10.1016/0042-207X(86)90140-5",

language = "English (US)",

volume = "36",

pages = "917--920",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

number = "11-12",

}

TY - JOUR

T1 - Low-energy hydrogen implantation for silicon Schottky barrier modification

AU - Ashok, S.

AU - Ringel, SA

N1 - Funding Information: Solid State Electronics Center, Plymouth, MN, for the dopant and argon implantation. We would also like to acknowledge the keen interest of Dr B J Baliga in the investigation. This work was supported by grants from the US National Science Foundation (No ECS-8305646) and the General Electric Corporate Research and Development.

PY - 1986

Y1 - 1986

N2 - Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

AB - Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022818910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022818910&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(86)90140-5

DO - 10.1016/0042-207X(86)90140-5

M3 - Article

AN - SCOPUS:0022818910

SN - 0042-207X

VL - 36

SP - 917

EP - 920

JO - Vacuum

JF - Vacuum

IS - 11-12

ER -

Low-energy hydrogen implantation for silicon Schottky barrier modification

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this