Low-energy hydrogen implantation for silicon Schottky barrier modification

S. Ashok, SA Ringel

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

Original languageEnglish (US)
Pages (from-to)917-920
Number of pages4
Issue number11-12
StatePublished - 1986

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


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