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Low-energy hydrogen ion implantation in Schottky barrier control
R. Singh, S. Ashok
Engineering Science and Mechanics
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Article
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peer-review
13
Scopus citations
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Keyphrases
Low Energy
100%
Dopant Atoms
100%
Schottky Barrier
100%
Dopant
100%
Barrier Control
100%
Hydrogen Ion Implantation
100%
Hydrogen Ion
50%
Ion Beam
50%
Low Temperature
50%
Thermal Annealing
50%
Atomic Hydrogen
50%
Ion Implantation
50%
Barrier Height
50%
Annealing Temperature
50%
Induced Damage
50%
Dopant Ions
50%
Undesirable Effects
50%
Passivation
50%
Schottky Barrier Height
50%
Height Control
50%
Semiconductor Surface
50%
Material Science
Doping (Additives)
100%
Schottky Barrier
100%
Ion Implantation
100%
Silicon
20%
Annealing
20%