Low-frequency noise in MoSe₂ field effect transistors

One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX₂ (X ≡ S, Se) have shown promising transistor characteristics such as I_ON/I_OFF ratio exceeding 10⁶ and low I_OFF, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS₂ FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe₂ FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe₂ FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.